CY14V104LA datasheet(8/22 Pages) CYPRESS

Part #	CY14V104LA

Description	4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times

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Manufacturer	CYPRESS [Cypress Semiconductor]

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CY14V104LA

CY14V104NA

Document #: 001-53954 Rev. *F

Page 8 of 22

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................–65

C to +150 C

Maximum accumulated storage time

At 150

C ambient temperature .......................1000 h

At 85

C ambient temperature ......................20 Years

Ambient temperature with

power applied ...........................................–55

C to +150 C

Supply voltage on VCC relative to VSS .......... –0.5 V to 4.1 V

Supply voltage on VCCQ relative to VSS ...... –0.5 V to 2.45 V

Voltage applied to outputs

in High Z state .................................. –0.5 V to VCCQ + 0.5 V

Input voltage ..................................... –0.5 V to VCCQ + 0.5 V

Transient voltage (< 20 ns) on

any pin to ground potential ............... –2.0 V to VCCQ + 2.0 V

Package power dissipation

capability (TA = 25 °C) ..................................................1.0 W

Surface mount Pb soldering

temperature (3 seconds) ..........................................+260

C

DC output current (1 output at a time, 1s duration) .....15 mA

Static discharge voltage

(per MIL-STD-883, Method 3015) ......................... > 2001 V

Latch up current .................................................... > 140 mA

Operating Range

Range Ambient Temperature

VCC

VCCQ

Industrial

–40

C to +85 C3.0 V – 3.6 V 1.65 V – 1.95 V

DC Electrical Characteristics

Over the Operating Range

Parameter

Description

Test Conditions

Min

Typ [9]

Max

Unit

VCC

Power supply voltage

–

3.0

3.3

3.6

V

VCCQ

1.65

1.8

1.95

V

ICC1

Average VCC current

tRC = 25 ns

tRC = 45 ns

Values obtained without output loads

(IOUT = 0 mA)

––

70

mA

––

52

mA

ICCQ1

Average VCCQ current

–

15

mA

––

10

mA

ICC2

Average VCC current during

STORE

All inputs don’t care, VCC = Max

Average current for duration tSTORE

––

10

mA

ICC3

Average VCC current at

tRC= 200 ns, VCC(Typ), 25 °C

All inputs cycling at CMOS levels.

Values obtained without output loads

(IOUT = 0 mA).

–35

–

mA

ICCQ3

Average VCCQ current at

tRC= 200 ns, VCCQ(Typ), 25 °C

–5

–

mA

ICC4

Average VCAP current during

AutoStore cycle

All inputs don’t care. Average current

for duration tSTORE

––

8

mA

ISB

VCC standby current

CE > (VCC – 0.2 V).

VIN < 0.2 V or > (VCC – 0.2 V).

Standby current level after

non-volatile cycle is complete. Inputs

are static. f = 0 MHz.

––

8

mA

IIX[10]

Input leakage current

(except HSB)

VCCQ = Max, VSS < VIN < VCCQ

–1

–

+1

A

Input leakage current (for HSB)VCCQ = Max, VSS < VIN < VCCQ

–100

–

+1

A

IOZ

Off-state output leakage current VCCQ = Max, VSS < VOUT < VCCQ,

CE or OE > VIH or BHE/BLE > VIH or

WE < VIL

–1

–

+1

A

VCAP[11]

Storage capacitor

Between VCAP pin and VSS, 5 V rated

61

68

180

F

Notes

9. Typical values are at 25 °C, VCC = VCC(Typ) and VCCQ = VCCQ(Typ). Not 100% tested.

10. The HSB pin has IOUT = -4 µA for VOH of 1.07 V when both active HIGH and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

11. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor

on VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore

it is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options.

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