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CY14V101NA-BA45XI Datasheet(PDF) 1 Page - Cypress Semiconductor |
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CY14V101NA-BA45XI Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 22 page  CY14V101LA CY14V101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document #: 001-53953 Rev. *H Revised July 4, 2011 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features ■ 25 ns and 45 ns access times ■ Internally organized as 128 K × 8 (CY14V101LA) or 64 K × 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small capacitor ■ STORE to QuantumTrap non-volatile elements initiated by software, device pin, or AutoStore on power down ■ RECALL to SRAM initiated by software or power up ■ Infinite read, write, and recall cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V ■ Industrial temperature ■ 48-ball fine-pitch ball grid array (FBGA) package ■ Pb-free and restriction of hazardous substances (RoHS) compliance Functional Description The Cypress CY14V101LA/CY14V101NA is a fast static RAM, with a non-volatile element in each memory cell. The memory is organized as 128 K bytes of 8 bits each or 64 K words of 16 bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control. STATIC RAM ARRAY 1024 X 1024 R O W D E C O D E R COLUMN I/O COLUMN DEC I N P U T B U F F E R S POWER CONTROL STORE/RECALL CONTROL Quatrum Trap 1024 X 1024 STORE RECALL V CC V CAP HSB A 0 A 1 A 2 A 3 A 4 A10 A11 SOFTWARE DETECT A 14 - A2 OE CE WE BHE BLE A 5 A 6 A 7 A 8 A 9 A 12 A 13 A 14 A 15 A 16 DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7 DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 Logic Block Diagram [1, 2, 3] VCCQ Notes 1. Address A0–A16 for × 8 configuration and Address A0–A15 for × 16 configuration. 2. Data DQ0–DQ7 for × 8 configuration and Data DQ0–DQ15 for × 16 configuration. 3. BHE and BLE are applicable for × 16 configuration only. [+] Feedback |
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