SML60W32

6/99

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Gate – Source Voltage Transient

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

600

31.5

126

±30

±40

400

3.2

–55 to 150

300

31.5

50

2500

V

A

A

V

W

W/°C

°C

A

mJ

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

600V

31.5A

Ω

• Faster Switching

• Lower Leakage

• TO–267 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

D

S

G

TO–267 Package Outline.

Dimensions in mm (inches)