SML80A12 datasheet(2/2 Pages) SEME-LAB

Part #	SML80A12

Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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SML80A12

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

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Characteristic

Test Conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Characteristic

Test Conditions

Min.

Typ.

Max. Unit

11.5

46

1.3

650

9

IS

ISM

VSD

trr

Qrr

(Body Diode)

VGS = 0V , IS = – ID [Cont.]

IS = – ID [Cont.] , dls / dt = 100A/µs

Continuous Source Current

Pulsed Source Current1

Diode Forward Voltage2

Reverse Recovery Time

Reverse Recovery Charge

A

V

ns

µC

Characteristic

Min.

Typ.

Max. Unit

0.62

30

RθJC

RθJA

Junction to Case

Junction to Ambient

°C/W

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380

µS , Duty Cycle < 2%

3) See MIL–STD–750 Method 3471

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge3

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VGS = 0V

VDS = 25V

f = 1MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 1.6Ω

pF

nC

ns

3050

3700

300

420

150

225

150

225

17

25

70

105

12

24

11

22

60

90

12

24

CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.

Characteristic

Test Conditions

Min.

Typ.

Max. Unit

BVDSS

IDSS

IGSS

VGS(TH)

ID(ON)

RDS(ON)

VGS = 0V , ID = 250µA

VDS = VDSS

VDS = 0.8VDSS , TC = 125°C

VGS = ±30V , VDS = 0V

VDS = VGS , ID = 1.0mA

VDS > ID(ON) x RDS(ON) Max

VGS = 10V

VGS = 10V , ID = 0.5 ID [Cont.]

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

(VGS = 0V)

Gate – Source Leakage Current

Gate Threshold Voltage

On State Drain Current 2

Drain – Source On State Resistance 2

800

25

250

±100

24

11.5

0.650

V

µA

nA

V

A

Ω

STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)

DYNAMIC CHARACTERISTICS

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