Electronic Components Datasheet Search |
|
CY62126EV30LL Datasheet(PDF) 9 Page - Cypress Semiconductor |
|
CY62126EV30LL Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 18 page CY62126EV30 MoBL® Document Number: 38-05486 Rev. *I Page 9 of 18 Write Cycle No. 1 (WE controlled) [21, 22, 23] Write Cycle No. 2 (CE controlled) [21, 22, 23] Switching Waveforms (continued) tHD tSD tPWE tSA tHA tAW tWC tHZOE DATAIN NOTE 24 tBW tSCE DATA I/O ADDRESS CE WE OE BHE/BLE tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATAIN tBW tSA CE ADDRESS WE DATA I/O OE BHE/BLE NOTE 24 Notes 21. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write. 22. Data I/O is high impedance if OE = VIH. 23. If CE goes high simultaneously with WE = VIH, the output remains in a high impedance state. 24. During this period, the I/Os are in output state. Do not apply input signals. [+] Feedback |
Similar Part No. - CY62126EV30LL |
|
Similar Description - CY62126EV30LL |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |