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CY62126EV30LL Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62126EV30LL
Description  1-Mbit (64 K x 16) Static RAM Automatic power down when deselected
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62126EV30LL Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62126EV30 MoBL®
Document Number: 38-05486 Rev. *I
Page 9 of 18
Write Cycle No. 1 (WE controlled) [21, 22, 23]
Write Cycle No. 2 (CE controlled) [21, 22, 23]
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tWC
tHZOE
DATAIN
NOTE 24
tBW
tSCE
DATA I/O
ADDRESS
CE
WE
OE
BHE/BLE
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
DATAIN
tBW
tSA
CE
ADDRESS
WE
DATA I/O
OE
BHE/BLE
NOTE 24
Notes
21. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of
these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.
22. Data I/O is high impedance if OE = VIH.
23. If CE goes high simultaneously with WE = VIH, the output remains in a high impedance state.
24. During this period, the I/Os are in output state. Do not apply input signals.
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