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CY62157EV18LL-55BVXI Datasheet(PDF) 9 Page - Cypress Semiconductor

Part # CY62157EV18LL-55BVXI
Description  8-Mbit (512K x 16) Static RAM Automatic power down when deselected
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62157EV18LL-55BVXI Datasheet(HTML) 9 Page - Cypress Semiconductor

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CY62157EV18 MoBL®
Document #: 38-05490 Rev. *H
Page 9 of 16
Figure 3. Write Cycle 1 (WE Controlled) [23, 24, 25]
Figure 4. Write Cycle 2 (CE1 or CE2 Controlled)
[23, 24, 25]
Switching Waveforms (continued)
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
tBW
NOTE 26
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
VALID DATA
tBW
tSA
NOTE 26
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
Notes
23. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
24. Data I/O is high impedance if OE = VIH.
25. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
26. During this period, the I/Os are in output state and input signals must not be applied.


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