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1MB08D-120 Datasheet(PDF) 3 Page - Fuji Electric |
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1MB08D-120 Datasheet(HTML) 3 Page - Fuji Electric |
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3 / 5 page  Characteristics 1MB08-120,1MB08D-120 1MB08-120, 1MB08D-120 Molded IGBT Collector current vs. Collector-Emitter voltage Tj=25°C Collector current vs. Collector-Emitter voltage Tj=125°C Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C Switching time vs. Collector current Vcc=600V, RG=200 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=200 ohm, VGE=±15V, Tj=125°C Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 1 2 3 4 5 0 5 10 15 20 Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V] 100 Collector current : Ic [A] Collector current : Ic [A] 0 2 4 6 8 10 20 15 10 5 0 10 8 6 4 2 0 1000 10 8 6 4 2 0 100 1000 0 1 2 3 4 5 0 5 10 15 20 0 2 4 6 8 10 20 15 10 5 0 |
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