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1MBI1200U4C-170 Datasheet(PDF) 1 Page - Fuji Electric |
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1MBI1200U4C-170 Datasheet(HTML) 1 Page - Fuji Electric |
1 / 6 page 1 1MBI1200U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=25°C 1600 A Tc=80°C 1200 Ic pulse 1ms Tc=25°C 3200 Tc=80°C 2400 -Ic 1200 -Ic pulse 1ms 2400 Collector power dissipation Pc 1 device 7350 W Junction temperature Tj 150 °C Storage temperature Tstg -40 to +125 °C Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. 3400 VAC Screw torque Mounting (*2) 5.75 N·m Main Terminals (*2) 10 Sense Terminals (*2) 2.5 Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Symbols Conditions Characteristics Units min. typ. max. Zero gate voltage collector current ICES VGE = 0V, VCE = 1700V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 2400 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1200mA 5.5 6.5 7.5 V Collector-Emitter saturation voltage VCE (sat) (main terminal) VGE = 15V IC = 1200A Tj=25°C - 2.43 2.61 V Tj=125°C - 2.83 - VCE (sat) (chip) Tj=25°C - 2.25 2.40 Tj=125°C - 2.65 - Input capacitance Cies VGE = 0V, VCE = 10V, f = 1MHz - 112 - nF Turn-on time ton VCC = 900V, IC = 1200A VGE = ±15V, Tj = 125°C Rgon = 3.9Ω, Rgoff = 1.5Ω - 1.80 - µs tr - 0.85 - Turn-off time toff - 1.30 - tf - 0.35 - Forward on voltage VF (main terminal) VGE = 0V IF = 1200A Tj=25°C - 1.98 2.36 V Tj=125°C - 2.18 - VF (chip) Tj=25°C - 1.80 2.15 Tj=125°C - 2.00 - Reverse recovery time trr IF = 1200A - 0.35 - µs Lead resistance, terminal-chip (*3) R lead - 0.146 - mΩ Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Conditions Characteristics Units min. typ. max. Thermal resistance (1device) Rth(j-c) IGBT - - 0.017 °C/W FWD - - 0.030 Contact thermal resistance (1device) Rth(c-f) with Thermal Compound (*4) - 0.006 - Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. |
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