2

1MBI3600U4D-170

2

IGBT Modules

Characteristics (Representative)

VGE=+15V,chip

VGE=0V, f= 1MHz, Tj= 25°C

Tj= 25°C

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25°C,chip

Tj= 125°C, chip

Tj=25°C,chip

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Dynamic Gate charge (typ.)

Capacitance vs. Collector-Emitter voltage (typ.)

0

1000

2000

3000

4000

5000

6000

7000

8000

0.0

1.0

2.0

3.0

4.0

5.0

Collector-Emitter voltage : VCE [V]

VGE=20 15V 12V

10V

8V

0

1000

2000

3000

4000

5000

6000

7000

8000

0.0

1.0

2.0

3.0

4.0

5.0

Collector-Emitter voltage : VCE [V]

VGE=20V15V

12V

10V

8V

0

1000

2000

3000

4000

5000

6000

7000

8000

0

1

2

3

4

5

Collector-Emitter voltage : VCE [V]

Tj=125°C

Tj=25°C

0

2

4

6

8

10

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

Ic=7200A

Ic=3600A

Ic=1800A

1

10

100

1000

0

10

20

30

Collector-Emitter voltage : VCE [V]

Cies

Coes

Cres

0

200

400

600

800

1000

0

4000

8000

12000

16000

Gate charge : Qg [ nC ]

0

5

10

15

20

25

VGE

VCE