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2MBI200U2A-060_0409 Datasheet(PDF) 2 Page - Fuji Electric

Part # 2MBI200U2A-060_0409
Description  IGBT Module
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2MBI200U2A-060_0409 Datasheet(HTML) 2 Page - Fuji Electric

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2MBI200U2A-060
IGBT Module
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Vcc=300V, Ic=200A, Tj= 25°C
0
100
200
300
400
500
01
234
5
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
0
123
45
Collector-Emitter voltage : VCE [V]
VGE=20V 15V 12V
10V
8V
0
100
200
300
400
500
01
234
5
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
1015
2025
Gate - Emitter voltage : VGE [ V ]
Ic=400A
Ic=200A
Ic=100A
0.1
1.0
10.0
100.0
010
20
30
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
200
400
600
800
Gate charge : Qg [ nC ]
VGE
VCE


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