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2MBI200U2A-060_0409 Datasheet(PDF) 2 Page - Fuji Electric |
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2MBI200U2A-060_0409 Datasheet(HTML) 2 Page - Fuji Electric |
2 / 4 page 2MBI200U2A-060 IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Vcc=300V, Ic=200A, Tj= 25°C 0 100 200 300 400 500 01 234 5 Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 8V 0 100 200 300 400 500 0 123 45 Collector-Emitter voltage : VCE [V] VGE=20V 15V 12V 10V 8V 0 100 200 300 400 500 01 234 5 Collector-Emitter voltage : VCE [V] Tj=125°C Tj=25°C 0 2 4 6 8 10 5 1015 2025 Gate - Emitter voltage : VGE [ V ] Ic=400A Ic=200A Ic=100A 0.1 1.0 10.0 100.0 010 20 30 Collector-Emitter voltage : VCE [V] Cies Coes Cres 0 200 400 600 800 Gate charge : Qg [ nC ] VGE VCE |
Similar Part No. - 2MBI200U2A-060_0409 |
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Similar Description - 2MBI200U2A-060_0409 |
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