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2SK3693-01MR Datasheet(PDF) 1 Page - Fuji Electric |
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2SK3693-01MR Datasheet(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 TO-220F Item Symbol Ratings Unit Drain-source voltage VDS 450 VDSX *5 450 Continuous drain current ID ±17 Pulsed drain current ID(puls] ±68 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 17 Maximum Avalanche Energy EAS *1 221.9 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 2.16 Tc=25°C 80 Operating and storage Tch +150 temperature range Tstg Isolation Voltage Viso *6 2000 Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3693-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=450V VGS=0V VDS=360V VGS=0V VGS=±30V ID=8.5A VGS=10V ID=8.5A VDS=25V VCC=300V ID=8.5A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 1.563 58.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=225V ID=17A VGS=10V L=1.41mH Tch=25°C IF=17A VGS=0V Tch=25°C IF=17A VGS=0V -di/dt=100A/µs Tch=25°C V V A A V A mJ kV/µs kV/µs W °C °C V 450 3.0 5.0 25 250 100 0.29 0.38 714 1275 1900 200 300 9.5 14 27 40 27 40 48 72 711 33 50 13.5 20.3 10.5 16 17 1.20 1.80 0.57 6.5 -55 to +150 Outline Drawings [mm] Equivalent circuit schematic Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < Gate(G) Source(S) Drain(D) 200305 *4 VDS 450V *5 VGS=-30V *6 f=6-Hz, t=60sec. < = *1 L=1.41mH, Vcc=45V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C = < |
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