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2SK3873-01 Datasheet(PDF) 3 Page - Fuji Electric |
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2SK3873-01 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 3 2SK3873-01 FUJI POWER MOSFET -50 -25 0 255075 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µA Tch [ °C] 0 1020 3040506070 8090 100 110 120 130 140 0 2 4 6 8 10 12 14 Qg [nC] Typical Gate Charge Characteristics VGS=f(Qg):ID=56A,Tch=25 °C 224V 140V Vcc= 56V 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 VDS [V] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Crss Coss Ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 VSD [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C 10 -1 10 0 10 1 10 2 10 3 10 0 10 1 10 2 10 3 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω td(on) tr tf td(off) ID [A] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 I AS =23A I AS =34A I AS =56A starting Tch [ °C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=56A |
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