2

7MBR75VR120-50

2

IGBT Modules

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Symbols

Conditions

Characteristics

Units

min.

typ.

max.

Zero gate voltage collector current

-

-

1.0

mA

Gate-Emitter leakage current

-

-

200

nA

Gate-Emitter threshold voltage

6.0

6.5

7.0

V

Collector-Emitter saturation voltage

(terminal)

Tj=25°C

-

2.25

2.70

V

Tj=125°C

-

2.60

-

Tj=150°C

-

2.65

-

(chip)

Tj=25°C

-

1.85

2.30

Tj=125°C

-

2.20

-

Tj=150°C

-

2.25

-

Input capacitance

Cies

-

6.0

-

nF

Turn-on time

ton

-

0.39

1.20

µs

tr

-

0.09

0.60

tr (i)

-

0.03

-

Turn-off time

toff

-

0.53

1.00

tf

-

0.06

0.30

Forward on voltage

(terminal)

Tj=25°C

-

2.10

2.55

V

Tj=125°C

-

2.25

-

Tj=150°C

-

2.20

-

(chip)

Tj=25°C

-

1.70

2.15

Tj=125°C

-

1.85

-

Tj=150°C

-

1.80

-

Reverse recovery time

trr

-

-

0.1

µs

Zero gate voltage collector current

-

-

1.0

mA

Gate-Emitter leakage current

-

-

200

nA

Collector-Emitter saturation voltage

(terminal)

Tj=25°C

-

2.10

2.55

V

Tj=125°C

-

2.45

-

Tj=150°C

-

2.50

-

(chip)

Tj=25°C

-

1.85

2.30

Tj=125°C

-

2.20

-

Tj=150°C

-

2.25

-

Turn-on time

ton

-

0.39

1.20

µs

tr

-

0.09

0.60

Turn-off time

toff

-

0.53

1.00

tf

-

0.06

0.30

Reverse current

IRRM

-

-

1.00

mA

Forward on voltage

(chip)

terminal

-

1.80

2.10

V

chip

-

1.40

-

Reverse current

IRRM

-

-

1.0

mA

Resistance

R

T = 25°C

-

5000

-

Ω

T = 100°C

465

495

520

B value

B

T = 25 / 50°C

3305

3375

3450

K

Thermal resistance characteristics

Items

Symbols

Conditions

Characteristics

Units

min.

typ.

max.

Thermal resistance (1device)

Rth(j-c)

Inverter IGBT

-

-

0.39

°C/W

Inverter FWD

-

-

0.55

Brake IGBT

-

-

0.54

Converter Diode

-

-

0.43

Contact thermal resistance (1device) (*4)

Rth(c-f)

with Thermal Compound

-

0.05

-

Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.