KMB3D9N40TA datasheet(2/5 Pages) KEC

Part #	KMB3D9N40TA

Description	N-Ch Trench MOSFET

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2 / 5 page

2008. 6. 10

2/5

KMB3D9N40TA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, IDS=250 A

40

-

V

Drain Cut-off Current

IDSS

VGS=0V, VDS=32V

-

0.5

A

VGS=0V, VDS=32V, Tj=55

-

10

Gate Leakage Current

IGSS

VGS= 20V, VDS=0V

-

100

nA

Gate Threshold Voltage

Vth*

VDS=VGS, ID=250 A

1.0

-

3.0

V

Drain-Source ON Resistance

RDS(ON)*

VGS=10V, ID=3.9A

-

29

45

m

VGS=4.5V, ID=3.5A

-

42

58

Forward Transconductance

gfs*

VDS=10V, ID=3.9A

-

11

-

S

Dynamic

Input Capaclitance

Ciss

VDS=20V, f=1MHz, VGS=0V

-

446

-

pF

Ouput Capacitance

Coss

-

78

-

Reverse Transfer Capacitance

Crss

-

40

-

Total Gate Charge

Qg*

VDS=20V, VGS=10V, ID=3.9A

-

9.3

-

nC

Gate-Source Charge

Qgs*

-

1.8

-

Gate-Drain Charge

Qgd*

-

2.0

-

Turn-On Delay Time

td(on)*

VDD=20V, VGS=10V

ID=1A, RG=6

-

10.3

-

ns

Turn-On Rise Time

tr*

-

5.4

-

Turn-Off Delay Time

td(off)*

-

28.2

-

Turn-Off Fall Time

tf*

-

4.0

-

Source-Drain Diode Ratings

Source-Drain Forward Voltage

VSDF*

VGS=0V, IS=1A

-

0.8

1.2

V

Note > *Pulse Test : Pulse width <300

, Duty cycle < 2%

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