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2N3507L Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N3507L Datasheet(HTML) 2 Page - Semicoa Semiconductor |
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2 / 2 page  Data Sheet No. 2N3507L OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 60 V, VEB = 4 V Collector-Emitter Cutoff Current VCE = 60 V, VEB = 4 V, TA = +150 oC Collector Current Continuous VCB = 50 V IC 3.0 --- A ICEX2 --- 1.0 µA ICEX1 --- 1.0 µA V V(BR)EBO 5.0 --- V(BR)CEO 50 --- V Electrical Characteristics TC = 25 oC unless otherwise specified V(BR)CBO 80 --- V ON Characteristics Symbol Min Max Unit DC Current Gain IC = 500 mA, VCE = 1 V (pulsed) hFE1 35 175 --- IC = 1.5 A, VCE = 2 V (pulsed) hFE2 30 150 --- IC = 2.5 A, VCE = 3 V (pulsed) hFE3 25 --- --- IC = 3.0 A, VCE = 5 V (pulsed) hFE4 20 --- --- IC = 500 mA, VCE= 1 V (pulsed), TA = -55 oC hFE5 17 --- --- Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) VBE(sat)1 --- 1.0 V dc IC = 1.5 A, IB = 150 mA (pulsed) VBE(sat)2 0.9 1.4 V dc IC = 2.5 A, IB = 250 mA (pulsed) VBE(sat)3 --- 2.0 V dc Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) VCE(sat)1 --- 0.5 V dc IC = 1.5 A, IB = 150 mA (pulsed) VCE(sat)2 --- 1.0 V dc IC = 2.5 A, IB = 250 mA (pulsed) VCE(sat)3 --- 1.5 V dc Small Signal Characteristics Symbol Min Max Unit Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 20 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz pF CIBO --- 300 pF COBO --- 40 |hFE| 3.0 15 --- Pulse Response Characteristics Symbol Min Max Unit Delay Time IC = 1.5 A, IB1 = 150 mA Rise Time IC = 1.5 A, IB1 = 150 mA Storage Time IC = 1.5 mA, IB2 = IB1 = 150 mA Fall Time IC = 1.5 mA, IB2 = IB1 = 150 mA 30 ns tr --- td --- 15 ns ts --- 55 ns tf --- 35 ns |
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