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2N3700UB Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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2N3700UB Datasheet(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Data Sheet No. 2N3700UB OFF Characteristics Symbol Min Max Unit Collector-Base Breakdown Voltage IC = 100 µA Collector-Emitter Breakdown Voltage IC = 30 mA Emitter-Base Breakdown Voltage IE = 100 µA Collector-Emitter Cutoff Current VCE = 90 V Emitter-Base Cutoff Current VEB = 5 V Electrical Characteristics TC = 25 oC unless otherwise specified V(BR)CBO 140 --- V V(BR)CEO 80 --- V V V(BR)EBO 7.0 --- ICES --- 10 nA IEBO --- 10 nA ON Characteristics Symbol Min Max Unit DC Current Gain IC = 150 mA, VCE = 10 V hFE1 100 300 --- IC = 0.1 mA, VCE = 10 V hFE2 50 200 --- IC = 10 mA, VCE = 10 V (pulsed) hFE3 90 --- --- IC = 500 mA, VCE = 10 V (pulsed) hFE4 50 200 --- IC = 1 A, VCE = 10 V (pulsed) hFE5 15 --- --- Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) VBE(sat) --- 1.1 V dc Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA (pulsed) VCE(sat)1 --- 0.2 V dc IC = 500 mA, IB = 50 mA (pulsed) VCE(sat)2 --- 0.5 V dc Small Signal Characteristics Symbol Min Max Unit Short Circuit Forward Current Transfer Ratio IC = 1 mA, VCE = 5 V, f = 1 kHz Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 50 mA, f = 200 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 2.0 V, IC = 0, 100 kHz < f < 1 MHz Collector-Base Time Constant VCB = 10 V, IC = 10 mA, f = 79.8 MHz Noise Figure VCE = 10 V, IC = 100 µA, Rg = 1 kOhm |hFE| 5.0 20 --- pF CIBO --- 60 pF COBO --- 12 AC hFE 80 400 --- rb'CC --- 400 ps NF --- 4 dB Switching Characteristics Symbol Min Max Unit Pulse Response 15 ns, 50 ohm input pulse tON + tOFF --- 30 ns |
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