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FMI05N60E Datasheet(PDF) 2 Page - Fuji Electric |
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FMI05N60E Datasheet(HTML) 2 Page - Fuji Electric |
2 / 5 page 2 FMI05N60E 2 FUJI POWER MOSFET 0 2 4 6 8 10 12 14 1.0 1.2 1.4 1.6 1.8 2.0 4.5V ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25 °C 10V 6V 5V VGS=4.0V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 ID [A] Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C 0 1 2 3 4 5 6 7 8 9 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 VGS[V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C 0 4 8 12 16 20 24 0 3 6 9 12 15 VDS [V] Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25 °C 10V 5.0V 6.0V 4.5V VGS=4.0V 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 DC t PD Power loss waveform : Square waveform t PD t PD Power loss waveform : Square waveform VDS [V] Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c t= 1µs 10µs 1ms 100µs 0 25 50 75 100 125 150 0 20 40 60 80 100 120 Allowable Power Dissipation PD=f(Tc) Tc [°C] |
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