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FMI20N50E Datasheet(PDF) 1 Page - Fuji Electric |
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FMI20N50E Datasheet(HTML) 1 Page - Fuji Electric |
1 / 5 page 1 FMI20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 500 V VDSX 500 V VGS = -30V Continuous Drain Current ID ±20 A Pulsed Drain Current IDP ±80 A Gate-Source Voltage VGS ±30 V Repetitive and Non-Repetitive Maximum Avalanche Current IAR 20 A Note*1 Non-Repetitive Maximum Avalanche Energy EAS 582.5 mJ Note*2 Repetitive Maximum Avalanche Energy EAR 27 mJ Note*3 Peak Diode Recovery dV/dt dV/dt 7.4 kV/µs Note*4 Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5 Maximum Power Dissipation PD 2.16 W Ta=25°C 270 Tc=25°C Operating and Storage Temperature range Tch 150 °C Tstg -55 to +150 °C Outline Drawings [mm] Equivalent circuit schematic Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Symbol Conditions min. typ. max. Unit Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 500 - - V Gate Threshold Voltage VGS (th) ID=250µA, VDS=VGS 2.5 3.0 3.5 V Zero Gate Voltage Drain Current IDSS VDS=500V, VGS=0V Tch=25°C - - 25 µA VDS=400V, VGS=0V Tch=125°C - - 250 Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - 10 100 nA Drain-Source On-State Resistance RDS (on) ID=10A, VGS=10V - 0.27 0.31 Ω Forward Transconductance gfs ID=10A, VDS=25V 11 22 - S Input Capacitance Ciss VDS=25V VGS=0V f=1MHz - 2650 3980 pF Output Capacitance Coss - 250 375 Reverse Transfer Capacitance Crss - 19 28.5 Turn-On Time td(on) Vcc=300V VGS=10V ID=10A RGS=10Ω - 22 33 ns tr - 11 16.5 Turn-Off Time td(off) - 120 180 tf - 21 31.5 Total Gate Charge QG Vcc=250V ID=20A VGS=10V - 77 115.5 nC Gate-Source Charge QGS - 17 25.5 Gate-Drain Charge QGD - 22 33 Avalanche Capability IAV L=1.07mH, Tch=25°C 20 - - A Diode Forward On-Voltage VSD IF=20A, VGS=0V, Tch=25°C - 0.90 1.35 V Reverse Recovery Time trr IF=20A, VGS=0V -di/dt=100A/µs, Tch=25°C - 0.5 - µs Reverse Recovery Charge Qrr - 7 - µC Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS=8A, L=16.7mH, Vcc=50V, RG=50Ω EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph. Thermal Characteristics Description Symbol Test Conditions min. typ. max. Unit Thermal resistance Rth (ch-c) Channel to Case 0.460 °C/W Rth (ch-a) Channel to Ambient 62.0 °C/W Gate(G) Source(S) Drain(D) Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : IF≤-ID, dv/dt=7.4kV/µs, Vcc≤BVDSS, Tch≤150°C. T-Pack(L) |
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