2N5109 datasheet(2/2 Pages) SEMICOA

Part #	2N5109

Description	Type 2N5109 Geometry 1007 Polarity NPN

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Manufacturer	SEMICOA [Semicoa Semiconductor]

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Data Sheet No. 2N5109

OFF Characteristics

Symbol

Min

Max

Unit

Collector-Base Breakdown Voltage

IC = 100 µA

Collector-Emitter Breakdown Voltage

IC = 5 mA

Collector-Emitter Breakdown Voltage

IC = 5 mA, R2 = 10 ohms

Emitter-Base Breakdown Voltage

IE = 100 µA

Collector-Emitter Cutoff Current

VCE = 15 V

Collector-Emitter Cutoff Current

VCE = 15 V, TC = +175

oC

V(BR)CER

40

---

V

ICEO2

---

5.0

mA

ICEO1

---

20

µA

V

V(BR)EBO

3.0

---

V(BR)CEO

20

---

V

Electrical Characteristics

TC = 25

oC unless otherwise specified

V(BR)CBO

40

---

V

ON Characteristics

Symbol

Min

Max

Unit

Forward Current Transfer Ratio

IC = 50 mA, VCE = 15 V (pulsed)

hFE1

40

150

---

IC = 50 mA, VCE = 5.0 V (pulsed)

hFE2

15

---

Collector-Emitter Saturation Voltage

IC = 100 mA, IB = 50 mA (pulsed)

VCE(sat)1

---

0.5

V dc

Small Signal Characteristics

Symbol

Min

Max

Unit

Magnitude of Common Emitter, Small Signal, Short Circuit

Current Transfer Ratio

IC = 25 mA, VCE = 15 V, f = 200 MHz

5.0

10

---

IC = 25 mA, VCE = 15 V, f = 200 MHz

6.0

11

---

IC = 25 mA, VCE = 15 V, f = 200 MHz

5.0

10.5

---

Open Circuit Output Capacitance

VCB = 28 V, IE = 0, 100 kHz < f < 1 MHz

Power Gain (Narrow Band) Current

VCC = 15 V, IC = 50 mA, f = 200 MHz

Cross Modulation

VCC = 15 V, IC = 50 mA, f = 200 MHz

54 dBm V outpuot

Noise Figure

VCC = 15 V, IC = 50 mA, f = 200 MHz

Voltage Gain (Wideband)

VCC = 15 V, IC = 50 mA, f = 50 to 216 MHz

|hFE|

pF

COBO

---

3.5

GPE

11

3.5

dB

cm

---

-57

dB

NF

---

3.5

dB

GVE

11

---

dB

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