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P2H7M441L Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation |
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P2H7M441L Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation |
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3 / 3 page  - 305 - 80 60 40 20 0 02468 10 12 DRAIN TO SOURCE VOLTAGE VDS (V) TC=25ı 250 s Pulse Test 10V 6V 4V VGS=5V Fig. 1 Typical Output Characteristics 18 15 12 9 6 3 0 1 2 5 10 20 50 100 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1kHz Ciss Coss Crss Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 1000 500 100 200 50 20 10 1 2 5 10 20 50 100 RG=7 VDD=250V TC=25ı 80 s Pulse Test td(off) td(on) tr tf Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 200 50 100 20 10 5 0.5 1 2 0.2 1 2 5 10 20 50 100 500 200 1000 DRAIN TO SOURCE VOLTAGE VDS (V) TC=25ı Tj=150ıMAX Single Pulse 10 s 1ms 10ms DC 100 s -441L -440L Operation in this area is limited by RDS (on) Fig. 10 Maximum Safe Operating Area 80 60 40 20 0 02468 VDS=50V 250 s Pulse Test Tj=25ı 125ı GATE TO SOURCE VOLTAGE VGS (V) Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage 16 12 8 4 0 0 80 160 240 320 400 480 TOTAL GATE CHRAGE Qg (nC) ID=35A 100V 250V 400V VDD= Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE VSD (V) 250 s Pulse Test Tj=125ı Tj=25ı Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 10 -2 2 10 0 5 2 10 -1 5 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 PULSE DURATION t (s) Per Unit Base Rth(j-c)=0.36ı/W 1 Shot Pulse Fig. 11 Normalized Transient Thermal impedance(MOSFET) 8 6 4 2 0 0 4 8 12 16 GATE TO SOURCE VOLTAGE VGS (V) TC=25ı 250 s Pulse Test ID=50A 25A 15A Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature 10 5 1 2 0.5 0.2 0.1 2 5 10 20 50 100 200 ID=25A VDD=250V TC=25ı 80 s Pulse Test SERIES GATE IMPEDANCE RG ( ) toff ton Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 2000 1000 200 500 100 50 0 100 200 300 400 500 600 -dis/dt (A/ s) trr IR IS=50A IS=25A Tj=150ı Fig. 9 Typical Reverse Recovery Characteristics |
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