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KTD1415 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD1415
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2007. 5. 22
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1415
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH POWER SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A.
Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
1
2
3
L
N
M
D
N
H
E
R
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Φ3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=100V, IE=0
-
-
100
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
3.0
mA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
100
-
-
V
DC Current Gain
hFE(1)
VCE=3V, IC=3A
2000
-
15000
hFE(2)
VCE=3V, IC=7A
1000
-
-
Collector-Emitter Saturation Voltage
VCE(sat)(1)
IC=3A, IB=6mA
-
0.9
1.5
V
VCE(sat)(2)
IC=7A, IB=14mA
-
1.2
2.0
Base-Emitter Saturation Voltage
VBE(sat)
IC=3A, IB=6mA
-
1.5
2.5
V
Switching
Time
Turn-on Time
ton
15
CC
V
=45V
DUTY CYCLE
1%
I B2
B2
I
=-I
=6mA
B1
B2
I
I B1
20
µS
B1
I
INPUT
OUTPUT
-
0.8
-
S
Storage Time
tstg
-
3.0
-
Fall Time
tf
-
2.5
-
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
7
A
Base Current
IB
0.2
A
Collector Power Dissipation (Tc=25
)
PC
30
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
5K
BASE
COLLECTOR
EMITTER
150
~
=
~
=
EQUIVALENT CIRCUIT




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