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KTD2092 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD2092
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2007. 5. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD2092
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
High hFE : hFE=500
1500 (IC=0.5A).
Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A).
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
TO-220IS
0.76+0.09/-0.05
A
B
C
D
E
F
G
0.5+0.1/-0.05
H
1.2+0.25/-0.1
1.5+0.25/-0.1
J
K
L
M
N
P
Q
R
1
2
3
L
N
M
D
N
H
E
R
L
S
0.5 Typ
S
D
A
C
2.70 0.3
+
_
12.0 0.3
+
_
13.6 0.5
+
_
3.7 0.2
+
_
Ī¦3.2 0.2
+
_
10.0 0.3
+
_
15.0 0.3
+
_
3.0 0.3
+
_
4.5 0.2
+
_
2.54 0.1
+
_
+
2.6 0.2
_
6.8 0.1
+
_
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
DC
IC
3
A
Pulse
ICP
5
Base Current
IB
1
A
Collector Power
Dissipation
Ta=25
PC
2
W
Tc=25
25
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=80V, IE=0
-
-
10
A
Emitter Cut-off Current
IEBO
VEB=7V, IC=0
-
-
10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, IB=0
80
-
-
V
DC Current Gain
hFE(1)
VCE=1V, IC=0.5A
500
-
1500
hFE(2)
VCE=1V, IC=1A
150
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=0.01A
-
-
0.35
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=0.01A
-
-
1.2
V
Collector-Emitter Forward Voltage
VECF
IE=3A, IB=0
-
-
2.5
V
Transition Frequency
fT
VCE=5V, IC=1A
-
140
-
MHz
Collector Output Capacitance
Cob
VCE=10V, IE=0, f=1MHz
-
30
-
pF
Switching Time
Turn-on Time
ton
IB1
B1
I
0
CC
V
=30V
IB2
IB2
20
Āµsec
I
=-I
=10mA
B1
B2
OUTPUT
DUTY CYCLE < 1%
INPUT
-
0.5
-
S
Storage Time
Tstg
-
5.0
-
Fall Time
tf
-
0.7
-
BASE
COLLECTOR
EMITTER
EQUIVALENT CIRCUIT




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