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YG855C12R Datasheet(PDF) 3 Page - Fuji Electric

Part # YG855C12R
Description  Schottky Barrier Diode
Download  6 Pages
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

YG855C12R Datasheet(HTML) 3 Page - Fuji Electric

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2
3
YG855C12R
http://www.fujisemi.com
FUJI Diode
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
16
Per 1element
DC
Square wave λ=180°
Sine wave λ=180°
Square wave λ=120°
Square wave λ=60°
Forward Power Dissipation (max.)
Io Average Output Current (A)
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Reverse Power Dissipation (max.)
α
=180°
DC
VR Reverse Voltage (V)
λ
360°
I0
α
360°
VR
0.1
1
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Forward Characteristic (typ.)
VF Forward Voltage (V)
0
10
20
30
40
50
60
70
80
90
100 110 120 130
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
Reverse Characteristic (typ.)
Tj= 25°C
Tj=100°C
Tj=125°C
Tj=150°C
VR Reverse Voltage (V)


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