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L6726A Datasheet(PDF) 11 Page - STMicroelectronics |
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L6726A Datasheet(HTML) 11 Page - STMicroelectronics |
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11 / 35 page  L6726A Driver section Doc ID 12754 Rev 4 11/35 5.1 Power dissipation L6726A embeds high current MOSFET drivers for both high side and low side MOSFETs: it is then important to consider the power that the device is going to dissipate in driving them in order to avoid overcoming the maximum junction operative temperature. Two main terms contribute in the device power dissipation: bias power and drivers power. ● Device bias power (PDC) depends on the static consumption of the device through the supply pins and it is simply quantifiable as follow (assuming to supply HS and LS drivers with the same VCC of the device): ● Drivers power is the power needed by the driver to continuously switch on and off the external MOSFETs; it is a function of the switching frequency, the voltage supply of the driver and total gate charge of the selected MOSFETs. It can be quantified considering that the total power PSW dissipated to switch the MOSFETs (easy calculable) is dissipated by three main factors: external gate resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance. This last term is the important one to be determined to calculate the device power dissipation. The total power dissipated to switch the MOSFETs results: where VBOOT - VPHASE is the voltage across the bootstrap capacitor. External gate resistors helps the device to dissipate the switching power since the same power PSW will be shared between the internal driver impedance and the external resistor resulting in a general cooling of the device. Figure 4. Soft start (left) and disable (right) P DC V CC I CC I BOOT + () ⋅ = P SW F SW Q gHS V BOOT V PHASE – () Q gLS V CC ⋅ + ⋅ [] ⋅ = |
Similar Part No. - L6726A_10 |
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Similar Description - L6726A_10 |
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