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SKIM909GD066HD Datasheet(PDF) 1 Page - Semikron International |
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SKIM909GD066HD Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKiM909GD066HD © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM® 93 GD Trench IGBT Modules SKiM909GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology •VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 600 V IC Tj = 175 °C Ts =25°C 899 A Ts =70°C 715 A ICnom 900 A ICRM ICRM = 2xICnom 1800 A VGES -20 ... 20 V tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj =150 °C 6µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Ts =25°C 712 A Ts =70°C 550 A IFnom 900 A IFRM IFRM = 2xIFnom 1800 A IFSM tp = 10 ms, sin 180°, Tj =25°C 4320 A Tj -40 ... 175 °C Module It(RMS) Tterminal =80 °C 700 A Tstg -40 ... 125 °C Visol AC sinus 50 Hz, t = 1 min 2500 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =900 A VGE =15 V chiplevel Tj =25 °C 1.45 1.85 V Tj =150 °C 1.70 2.10 V VCE0 Tj =25 °C 0.9 1 V Tj =150 °C 0.85 0.9 V rCE VGE =15 V Tj =25 °C 0.6 0.9 m Tj =150 °C 0.9 1.3 m VGE(th) VGE=VCE, IC = 14.4 mA 5 5.8 6.5 V ICES VGE =0 V VCE = 600 V Tj =25 °C 0.1 0.3 mA Tj =150 °C mA Cies VCE =25V VGE =0 V f=1MHz 55.44 nF Coes f=1MHz 3.46 nF Cres f=1MHz 1.64 nF QG VGE = - 8 V...+ 15 V 7200 nC RGint Tj =25°C 0.3 td(on) VCC = 300 V IC =900 A RG on =3 RG off =3 di/dton = 5100 A/µs di/dtoff =9000 A/µs Tj =150 °C 570 ns tr Tj =150 °C 160 ns Eon Tj =150 °C 36 mJ td(off) Tj =150 °C 1290 ns tf Tj =150 °C 90 ns Eoff Tj =150 °C 88 mJ Rth(j-s) per IGBT 0.078 K/W |
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Similar Description - SKIM909GD066HD_11 |
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