KSD-T0A015-001

2

SMK0170

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

700

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

±100

nA

Drain-source on-resistance

④

-

12.5

15.0

Ω

Forward transfer conductance

④

-

2.1

-

S

Input capacitance

Ciss

-

124

155

Output capacitance

Coss

-

17.7

22.1

Reverse transfer capacitance

Crss

f=1MHz

-

2.6

3.3

pF

Turn-on delay time

-

7

-

Rise time

-

21

-

Turn-off delay time

-

13

-

Fall time

-

27

-

ns

Total gate charge

-

4.1

5.1

Gate-source charge

-

1.8

-

Gate-drain charge

-

0.9

-

nC

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

-

-

0.3

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

1.2

A

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

190

-

ns

Reverse recovery charge

-

0.53

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature