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MGF0953P Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # MGF0953P
Description  High-power GaAs FET (small signal gain stage)
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MGF0953P Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold
non - matched
DESCRIPTION
The MGF0953P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
 High output power
Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
 High power gain
Gp=16.5dB(TYP.) @f=2.15GHz
 High power added efficiency
add=40%(TYP.) @f=2.15GHz,Pin=10dBm
 Plastic Mold Lead – less Package
APPLICATION
 For L/S Band power amplifiers
QUALITY
 GG
RECOMMENDED BIAS CONDITIONS
 Vds=10V
 Ids=0.15A
 Rg=1000
Delivery
Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to source breakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
0.4
A
IGR
Reverse gate current
-1.25
mA
IGF
Forward gate current
5
mA
PT
Total power dissipation
6.25
W
Tch
Cannel temperature
150
C
Tstg
Storage temperature
-40 to +150
C
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=0.1mA
-2
-
-5
V
Po *1
Output power
26
28
-
dBm
add *1
Power added Efficiency
-
40
-
%
GLP *2
Linear Power Gain
VDS=10V,ID=0.15A,f=2.15GHz
*1:
Pin=10dBm, *2:Pin=0dB
16.5
18
-
dB
Rth(ch-c)
Thermal Resistance
*3
Vf Method
-
14
20
C/W
*3
:Channel to case
Fig.1


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