KSD-T0P027-002

2

SMK730P

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

400

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

0.8

1.0



Forward transfer conductance

④

-

3.8

-

S

Input capacitance

Ciss

f=1MHz

-

732

915

pF

Output capacitance

Coss

-

91

114

Reverse transfer capacitance

Crss

-

14.0

17.5

Turn-on delay time

③④

-

12

-

ns

Rise time

-

46

-

Turn-off delay time

-

50

-

Fall time

-

48

-

Total gate charge

③④

-

16

20

nC

Gate-source charge

-

5.1

-

Gate-drain charge

-

3.7

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

Integral reverse diode

in the MOSFET

-

-

5.5

A

Source current (Pulsed)

①

-

-

22

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

270

-

ns

Reverse recovery charge

-

1.9

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature