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MGFK25V4045 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGFK25V4045 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 3 page Publication Date : Apr., 2011 1 < X/Ku band internally matched power GaAs FET > MGFK25V4045 14.0 – 14.5 GHz BAND / 0.3W DESCRIPTION The MGFK25V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted High output power P1dB=0.3W (TYP.) @f=14.0 – 14.5GHz High linear power gain GLP=9.0dB (TYP.) @f=14.0 – 14.5GHz High power added efficiency P.A.E.=25% (TYP.) @f=14.0 – 14.5GHz APPLICATION 14.0 – 14.5 GHz band power amplifiers QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=8V ID=80mA Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings Unit VGDO Gate to drain breakdown voltage -15 V VGSO Gate to source breakdown voltage -15 V ID Drain current 500 mA IGR Reverse gate current -1 mA IGF Forward gate current 1 mA PT *1 Total power dissipation 2.7 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C *1 : Tc=25 C Electrical characteristics (Ta=25C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - 200 500 mA gm Transconductance VDS=3V,ID=150mA - 100 - mS VGS(off) Gate to source cut-off voltage VDS=3V,ID=1mA -2 - -5 V P1dB Output power at 1dB gain compression 23 26 - dBm GLP Linear Power Gain 7 9 - dB PAE Power added efficiency VDS=8V,ID(RF off)=150mA f=14.0 – 14.5GHz - 25 - % Rth(ch-c) *2 Thermal resistance delta Vf method - - 40 C/W *2 : Channel-case Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. |
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