2N6387 datasheet(1/6 Pages) ONSEMI

Part #	2N6387

Description	Plastic Medium-Power Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2007 - Rev. 13

1

Publication Order Number:

2N6387/D

2N6387, 2N6388

2N6388 is a Preferred Device

Plastic Medium-Power

Silicon Transistors

These devices are designed for general-purpose amplifier and

low-speed switching applications.

Features

• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc

• Collector-Emitter Sustaining Voltage - @ 100 mAdc

VCEO(sus) = 60 Vdc (Min) - 2N6387

= 80 Vdc (Min) - 2N6388

• Low Collector-Emitter Saturation Voltage -

VCE(sat) = 2.0 Vdc (Max) @ IC

= 5.0 Adc - 2N6387, 2N6388

• Monolithic Construction with Built-In Base-Emitter Shunt Resistors

• TO-220AB Compact Package

• Pb-Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

2N6387

2N6388

VCEO

60

80

Vdc

Collector-Base Voltage

2N6387

2N6388

VCB

60

80

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current - Continuous

- Peak

IC

10

15

Adc

Base Current

IB

250

mAdc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

65

0.52

W

W/

°C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

2.0

0.016

W

W/

°C

Operating and Storage Junction,

Temperature Range

TJ, Tstg

-65 to +150

°C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction-to-Case

RqJC

1.92

_C/W

Thermal Resistance, Junction-to-Ambient

RqJA

62.5

_C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

DARLINGTON NPN SILICON

POWER TRANSISTORS

8 AND 10 AMPERES

65 WATTS, 60 - 80 VOLTS

TO-220AB

CASE 221A

STYLE 1

1

2

3

4

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

2N638x = Device Code

x = 7 or 8

G

= Pb-Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N638xG

AYWW

2N6388

TO-220AB

50 Units / Rail

2N6388G

TO-220AB

(Pb-Free)

50 Units / Rail

Device

Package

Shipping

2N6387

TO-220AB

50 Units / Rail

2N6387G

TO-220AB

(Pb-Free)

50 Units / Rail

ORDERING INFORMATION

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