2N6038 datasheet(3/6 Pages) ONSEMI

Part #	2N6038

Description	Plastic Darlington Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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(PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039

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3

Figure 1. Switching Times Test Circuit

4.0

0.04

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

2.0

1.0

0.6

0.2

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.4

0.8

PNP

NPN

tf

tr

ts

td @ VBE(off) = 0

V2

approx

+8.0 V

V1

approx

-12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25

ms

0

RB

51

D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 8.0 k

≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1000

500

qJC(t) = r(t) qJC

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.03

0.3

3.0

30

300

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