BD242B datasheet(1/6 Pages) ONSEMI

Part #	BD242B

Description	Complementary Silicon Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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November, 2007 - Rev. 7

1

Publication Order Number:

BD241C/D

BD241C (NPN),

BD242B (PNP),

BD242C (PNP)

BD241C and BD242C are Preferred Devices

Complementary Silicon

Plastic Power Transistors

Designed for use in general purpose amplifier and switching

applications.

Features

• Collector-Emitter Saturation Voltage -

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

• Collector-Emitter Sustaining Voltage -

VCEO(sus) = 100 Vdc (Min) BD241C, BD242C

• High Current Gain - Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

• Compact TO-220 AB Package

• Epoxy Meets UL94 V-0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C

u 400 V

• Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

BD242B

BD241C

BD242C

Unit

Collector-Emitter Voltage

VCEO

80

100

Vdc

Collector-Emitter Voltage

VCES

90

115

Vdc

Emitter-Base Voltage

VEB

5.0

Vdc

Collector Current

Continuous

Peak

IC

3.0

5.0

Adc

Base Current

IB

1.0

Adc

Total Device Dissipation @

TC = 25°C

Derate above 25

°C

PD

40

0.32

W

W/

°C

Operating and Storage

Junction Temperature Range

TJ, Tstg

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction-to-Ambient

RqJA

62.5

°C/W

Thermal Resistance, Junction-to-Case

RqJC

3.125

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

BD241C

TO-220AB

CASE 221A-09

STYLE 1

50 Units/Rail

3

1

POWER TRANSISTORS

COMPLEMENTARY

SILICON

3 AMP

80-100 VOLTS

40 WATTS

2

MARKING

DIAGRAM

BD24xx = Device Code

xx = 1C, 2B, or 2C

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb-Free Package

http://onsemi.com

BD242B

TO-220AB

50 Units/Rail

AYWW

BD24xxG

BD242C

TO-220AB

50 Units/Rail

BD241CG

TO-220AB

(Pb-Free)

50 Units/Rail

BD242BG

TO-220AB

(Pb-Free)

50 Units/Rail

BD242CG

TO-220AB

(Pb-Free)

50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

Similar Part No. - BD242B

Manufacturer	Part #	Datasheet	Description
Mospec Semiconductor	BD242B	133Kb / 3P	POWER TRANSISTORS(3A,40W)
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Motorola, Inc	BD242B	139Kb / 6P	Complementary Silicon Plastic Power Transistors
ON Semiconductor	BD242B	155Kb / 6P	Complementary Silicon Plastic Power Transistors 80??00 VOLTS October, 2011 ??Rev. 8
Power Innovations Ltd	BD242B	87Kb / 6P	PNP SILICON POWER TRANSISTORS

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