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RA05H9595M Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # RA05H9595M
Description  952-954MHz 5W 14V, 3 Stage Amp.
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA05H9595M Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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Silicon RF Power Semiconductors
RA05H9595M
RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp.
RA05H9595M
22 Jun 2010
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA05H9595M is a 5-watt RF MOSFET Amplifier Module
that operate in the 952- to 954-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage
increases. With a gate voltage around 3.5V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 3.8V (typical) and 4V
(maximum).
At VGG=5V, the typical gate current is 1 mA.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=14V, VGG=0V)
• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW
•Frequency Range: 952-954MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
RoHS COMPLIANCE
• RA05H9595M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA05H9595M-101
Antistatic tray,
20 modules/tray
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
BLOCK DIAGRAM
2
4
1
5
3
PACKAGE CODE: H11S


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