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RA05H9595M Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RA05H9595M Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 8 page Silicon RF Power Semiconductors RA05H9595M RoHS Compliance, 952-954MHz 5W 14V, 3 Stage Amp. RA05H9595M 22 Jun 2010 1/8 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION The RA05H9595M is a 5-watt RF MOSFET Amplifier Module that operate in the 952- to 954-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum). At VGG=5V, the typical gate current is 1 mA. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=14V, VGG=0V) • Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW • IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW •Frequency Range: 952-954MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 60.5 x 14 x 6.4 mm RoHS COMPLIANCE • RA05H9595M-101 is a RoHS compliant products. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA05H9595M-101 Antistatic tray, 20 modules/tray 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) BLOCK DIAGRAM 2 4 1 5 3 PACKAGE CODE: H11S |
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