Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA05H9595M

RA05H9595M

22 Jun 2010

2/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

17

V

Gate Voltage

6

V

Input Power

4

mW

Output Power

7

W

Operation Case Temperature Range

-30 to +70

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

952

-

954

MHz

Output Power

5

-

-

W

Total Current

-

-

1.4

A

ρ

in

Input VSWR

-

-

3:1

—

2

-

-

-25

dBc

3

-

-

-30

dBc

—

Stability

Load VSWR=3:1, f=952-954MHz

No parasitic oscillation

—

—

Load VSWR Tolerance

Load VSWR=20:1, f=952-954MHz

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.