Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA30H3340M

RA30H3340M

24 Jun 2010

6/8

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RECOMMENDATIONS and APPLICATION INFORMATION:

Construction:

This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap

is attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and

coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and

matching circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection.

Following conditions shall be avoided:

a) Bending forces on the alumina substrate (for example during screwing or by fast thermal changes)

b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)

c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichloroethylene)

d) Frequent on/off switching causing thermal expansion of the resin

e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.

Mounting:

The heat sink flatness shall be less than 50µm (not flat heat sink or particles between module and heat sink may

cause the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later

when thermal expansion forces are added).

Thermal compound between module and heat sink is recommended for low thermal contact resistance and to

reduce the bending stress on the ceramic substrate caused by temperature difference to the heat sink.

The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.

M3 screws are recommended with tightening torque 4.0 to 6.0 kgf-cm.

Soldering and Defluxing:

This module is designed for manual soldering.

The leads shall be soldered after the module is screwed onto the heat sink.

The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.

Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause

bubbles in the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

Stage

(W)

(W)

(°C/W)

(A)

(V)

1

st

0.05

1.5

29.0

0.18

2

nd

1.5

9.0

2.4

1.60

3

rd

9.0

30.0

1.2

4.20

12.5

sink, including the contact resistance, is:

When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage

transistor is:

175°C maximum rating for the channel temperature ensures application under derated conditions.