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BUD42DT4G Datasheet(PDF) 2 Page - ON Semiconductor

Part # BUD42DT4G
Description  High Speed, High Gain Bipolar NPN Transistor
Download  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUD42DT4G Datasheet(HTML) 2 Page - ON Semiconductor

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BUD42D
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
RqJC
5.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
350
430
Vdc
Collector−Base Breakdown Voltage
(ICBO = 1 mA)
VCBO
650
780
Vdc
Emitter−Base Breakdown Voltage
(IEBO = 1 mA)
VEBO
9.0
12
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
100
200
mAdc
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
10
200
mAdc
Emitter−Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VBE(sat)
0.85
1.2
Vdc
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 0.5 Adc)
VCE(sat)
0.2
1.0
Vdc
DC Current Gain
(IC = 1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 5 Vdc)
hFE
8.0
10
13
12
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1.0 Adc)
VEC
0.9
1.5
V
SWITCHING CHARACTERISTICS: Resistive Load (D.C.≤ 10%, Pulse Width = 40 ms)
Turn−Off Time
(IC = 1.2 Adc, IB1 = 0.4 A, IB2 = 0.1 A, VCC = 300 V)
Toff
4.6
6.55
ms
Fall Time
(IC = 2.5 Adc, IB1 = IB2 = 0.5 A, VCC = 150 V, VBE = −2 V)
Tf
0.8
ms
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 ms and
3 ms respectively after
rising IB1 reaches
90% of final IB1
IC = 400 mA
IB1 = 40 mA
VCC = 300 V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
VCE(dsat)
2.8
3.2
V
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.75
1.3
IC = 1 A
IB1 = 200 mA
VCC = 300 V
@ 1 ms
@ TC = 25°C
@ TC = 125°C
2.1
4.7
@ 3 ms
@ TC = 25°C
@ TC = 125°C
0.35
0.6


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