BUH100G

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8

Table 1. Inductive Load Switching Drive Circuit

L = 10 mH

Inductive Switching

L = 200

mH

RBSOA

L = 500

mH

+15 V

1

mF

150

W

3 W

100

W

3 W

MPF930

+10 V

50

W

COMMON

500

mF

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

W

3 W

100

mF

A

1

mF

TYPICAL THERMAL RESPONSE

Figure 21. Forward Bias Power Derating

1

0

160

100

20

0.8

0.6

0.4

0.2

60

140

SECOND BREAKDOWN

DERATING

40

80

120

THERMAL DERATING

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 22 is

level. Second breakdown pulse limits are valid for duty

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using the

appropriate curve on Figure 21.

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn−off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating area

(Figure 23). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

Figure 22. Forward Bias Safe Operating Area

100

0.01

1000

10

100

1

0.1

DC

5 ms

1 ms

10

ms

1

ms

EXTENDED

SOA

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