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RA60H4047M1 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # RA60H4047M1
Description  400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA60H4047M1 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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Silicon RF Power Modules >
RA60H4047M1
RoHS Compliance, 400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date :Apr.2011
8
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=60W) is attenuated
up to 60 dB and only a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility
to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per normal
operation.
3. Before use;
Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet.
For copies of the formal specification sheets,
please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for
critical communications elements. In the application, which is base station applications and fixed station applications
that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider
the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability
report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.
3.RA series products and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage
therefore appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low.
It is recommended to
utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case
temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under
extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50
. Under the condition of operating into
a severe high load VSWR approaching an open or short, an over load condition could occur.
In the worst case there is
risk for burn out of the transistors and burning of other parts including the substrate in the module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch
condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is
recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
10. Please refer to the additional precautions in the formal specification sheet.


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