MBRD1035CTLT4 datasheet(1/6 Pages) ONSEMI

Part #	MBRD1035CTLT4

Description	SWITCHMODE Schottky Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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July, 2010 − Rev. 7

1

Publication Order Number:

MBRD1035CTL/D

MBRD1035CTL

SWITCHMODE

Schottky Power Rectifier

DPAK Power Surface Mount Package

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection

diodes.

Features

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Matched Dual Die Construction −

May be Paralleled for High Current Output

• High dv/dt Capability

• Short Heat Sink Tap Manufactured − Not Sheared

• Very Low Forward Voltage Drop

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Pb−Free Packages are Available

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260

°C Max. for 10 Seconds

SCHOTTKY BARRIER

RECTIFIER

10 AMPERES

35 VOLTS

1

3

4

DPAK

CASE 369C

MARKING DIAGRAM

1 2

3

4

http://onsemi.com

YWW

B10

35CLG

Y

= Year

WW

= Work Week

B1035CL

= Device Code

G

= Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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