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RD06HHF1 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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RD06HHF1 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 9 page Silicon RF Power Semiconductors RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 6 Jul 2010 6/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 65.06-j150.9 8.75-j4.92 Po=10W, Vdd=12.5V,Pin=0.15W f=30MHz Zout f=30MHz Zin Zo=50Ω |
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