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RD06HVF1 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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RD06HVF1 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 9 page Silicon RF Power Semiconductors RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W RD06HVF1 6 Jul 2010 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) OUTLINE DRAWING note: Torelance of no designation means typical value. Dimension in mm. 0.5+0.10/-0.15 PINS 1:GATE 2:SOURCE 3:DRAIN 1.3+/-0.4 2.5 9.5MAX 5deg 2.5 3.6+/-0.2 0.8+0.10/-0.15 1.2+/-0.4 2 9.1+/-0.7 1 3 2 |
Similar Part No. - RD06HVF1_10 |
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Similar Description - RD06HVF1_10 |
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