Silicon RF Power Semiconductors

RD06HVF1

RoHS Compliance,

Silicon MOSFET Power Transistor 175MHz,6W

RD06HVF1

6 Jul 2010

1/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically

designed for VHF RF power amplifiers applications.

FEATURES

High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION

For output stage of high power amplifiers in

VHF band mobile radio sets.

RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after the lot

marking.

This product include the lead in high melting temperature type solders.

How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

OUTLINE DRAWING

note:

Torelance of no designation means typical value.

Dimension in mm.

0.5+0.10/-0.15

PINS

1:GATE

2:SOURCE

3:DRAIN

1.3+/-0.4

2.5

9.5MAX

5deg

2.5

3.6+/-0.2

0.8+0.10/-0.15

1.2+/-0.4

2

9.1+/-0.7

1

3

2