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MBRS410ET3 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBRS410ET3
Description  Surface Mount Schottky Power Rectifier
Download  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRS410ET3 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
1
Publication Order Number:
MBRS410ET3/D
MBRS410ET3
Preferred Device
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
Very Low VF Accompanied by Low IR
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Designed for Low Leakage
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
Pb−Free Package is Available
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings:
Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
10
V
Average Rectified Forward Current
(@ TL = 130°C)
IO
4.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
250
A
Operating Junction Temperature
TJ
−65 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
ORDERING INFORMATION
MBRS410ET3
SMC
2500/Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
SMC
CASE 403
PLASTIC
B4E1
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
B4E1
G
G
MBRS410ET3G
SMC
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.


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