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MBRS340T3G Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRS340T3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MBRS320T3, MBRS330T3, MBRS340T3 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol MBRS320T3 MBRS330T3 MBRS340T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 110°C 4.0 @ TL = 105°C A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 80 A Operating Junction Temperature TJ − 65 to +150 °C ISO 7637 Pulse #1 (100 V, 10W) 5000 Pulses ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B >400 >8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead RqJL 11 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 25°C) VF 0.50 V Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR 2.0 20 mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 0.1 0.2 0.0 0.4 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1 0.8 TJ = 25°C TJ = 125°C TJ = 100°C TJ = −65°C VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) 1.0 0.3 0.1 0.5 0.7 0.9 10 0.1 0.2 0.0 0.4 0.6 1 0.8 TJ = 25°C TJ = 125°C TJ = 100°C TJ = −65°C 0.3 0.1 0.5 0.7 0.9 1.0 |
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