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MJD32 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJD32 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C VCEO(sus) 40 100 − − Vdc Collector Cutoff Current (VCE = 40 Vdc, IB = 0) MJD31, MJD32 (VCE = 60 Vdc, IB = 0) MJD31C, MJD32C ICEO − 50 mAdc Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 20 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 1 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) hFE 25 10 − 50 − Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) − 1.2 Vdc Base−Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) − 1.8 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT 3 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 20 − − 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = ⎪hfe⎪• ftest. |
Similar Part No. - MJD32 |
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Similar Description - MJD32 |
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