MJD32 datasheet(2/10 Pages) ONSEMI

Part #	MJD32

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, MJD32

MJD31C, MJD32C

VCEO(sus)

40

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, MJD32

(VCE = 60 Vdc, IB = 0)

MJD31C, MJD32C

ICEO

−

50

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−

20

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

25

10

−

50

−

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

−

1.2

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

−

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT

3

−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

20

−

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

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