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MJD127G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MJD127G
Description  Complementary Darlington Power Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD127G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 10
1
Publication Order Number:
MJD122/D
MJD122 (NPN)
MJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistors
High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C
u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector Current
− Continuous
− Peak
IC
8
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Case
RqJC
6.25
°C/W
Thermal Resistance
Junction−to−Ambient (Note1)
RqJA
71.4
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MARKING
DIAGRAM
A
= Assembly Location
Y
= Year
WW = Work Week
x
= 2 or 7
G
= Pb−Free Package
DPAK
CASE 369C
STYLE 1
AYWW
J12xG
1 2
3
4
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
Package
Shipping
ORDERING INFORMATION
MJD122
DPAK
75 Units/Rail
MJD122T4
DPAK
2500/Tape & Reel
MJD122T4G
DPAK
(Pb−Free)
2500/Tape & Reel
DPAK
75 Units/Rail
MJD127G
DPAK
(Pb−Free)
75 Units/Rail
MJD127
DPAK
2500/Tape & Reel
MJD127T4G
DPAK
(Pb−Free)
2500/Tape & Reel
http://onsemi.com
MJD122G
DPAK
(Pb−Free)
75 Units/Rail
MJD127T4
COLLECTOR 2,4
BASE
1
EMITTER 3


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