MJD200T4G datasheet(3/6 Pages) ONSEMI

Part #	MJD200T4G

Description	Complementary Plastic Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJD200 (NPN) MJD210 (PNP)

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3

25

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

50

75

100

125

150

15

10

TC

5

20

Figure 2. Switching Time Test Circuit

2.5

0

1.5

1

TA

0.5

2

+11 V

25

ms

0

-9 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

51

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

TC

TA (SURFACE MOUNT)

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

FOR PNP TEST CIRCUIT,

REVERSE ALL POLARITIES

10K

IC, COLLECTOR CURRENT (A)

10

5K

3K

2K

1K

500

300

200

100

50

1K

IC, COLLECTOR CURRENT (A)

VCC = 30 V

IC/IB = 10

TJ = 25°C

500

300

200

100

50

td

30

20

10

5

1

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

Figure 3. Turn−On Time

Figure 4. Turn−Off Time

3

2

5

2

13

tr

MJD200

MJD210

30

20

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

5

2

13

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

MJD200

MJD210

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