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MJE5730 Datasheet(PDF) 2 Page - ON Semiconductor |
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MJE5730 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MJE5730, MJE5731, MJE5731A http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731A VCEO(sus) 300 350 375 − − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) MJE5730 (VCE = 250 Vdc, IB = 0) MJE5731 (VCE = 300 Vdc, IB = 0) MJE5731A ICEO − − − 1.0 1.0 1.0 mAdc Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) MJE5730 (VCE = 350 Vdc, VBE = 0) MJE5731 (VCE = 400 Vdc, VBE = 0) MJE5731A ICES − − − 1.0 1.0 1.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE 30 10 150 − − Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) − 1.0 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) − 1.5 Vdc DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (IC = 0.2 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 − MHz Small−Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 − − 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. TJ = 25°C 0.03 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMPS) 2.0 0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0 30 10 3.0 Figure 2. Collector−Emitter Saturation Voltage 0.02 IC, COLLECTOR CURRENT (AMPS) 0 0.05 0.3 1.2 5.0 VCE = 10 V 1.0 2.0 1.4 1 TJ = 150°C 20 0.5 0.3 0.8 0.6 0.1 VCE(sat)) @ IC/IB = 5.0 0.2 0.2 0.4 25°C −55 °C 100 50 200 150°C −55 °C IC, COLLECTOR CURRENT (AMPS) 1.0 0.8 1.4 1.2 0.4 0 0.6 0.2 Figure 3. Base−Emitter Voltage 0.05 0.2 2.0 0.1 0.5 0.3 1.0 0.02 0.03 VBE(sat) @ IC/IB = 5.0 TJ = − 55°C 25°C 150°C 1.0 0 TC, CASE TEMPERATURE (°C) 0 50 175 0.8 0.6 0.4 0.2 75 100 125 Figure 4. Normalized Power Derating SECOND BREAKDOWN DERATING THERMAL DERATING 25 150 |
Similar Part No. - MJE5730_06 |
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Similar Description - MJE5730_06 |
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