MJE18008 datasheet(2/10 Pages) ONSEMI

Part #	MJE18008

Description	NPN Bipolar Power Transistor For Switching Power Supply Applications

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE18008G, MJF18008G

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

VCEO(sus)

450

−

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

−

100

mAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125_C)

Collector Cutoff Current (VCE = 800 V, VEB = 0)

(TC = 125_C)

ICES

−

100

500

100

mAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

IEBO

−

100

mAdc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)

Base−Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)

VBE(sat)

−

0.82

0.92

1.1

1.25

Vdc

Collector−Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 0.2 Adc)

(TC = 125_C)

(IC = 4.5 Adc, IB = 0.9 Adc)

(TC = 125_C)

VCE(sat)

−

0.3

0.35

0.4

0.6

0.65

0.7

0.8

Vdc

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

14

−

6.0

5.0

11

10

−

28

9.0

8.0

15

16

20

34

−

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

−

13

−

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

−

100

150

pF

Input Capacitance (VEB = 8.0 V)

Cib

−

1750

2500

pF

Dynamic Saturation Voltage:

Determined 1.0 ms and

3.0 ms respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 2.0 Adc

IB1 = 200 mAdc

VCC = 300 V)

1.0 ms

(TC = 125°C)

VCE(dsat)

−

5.5

11.5

−

Vdc

3.0 ms

(TC = 125°C)

−

3.5

6.5

−

(IC = 5.0 Adc

IB1 = 1.0 Adc

VCC = 300 V)

1.0 ms

(TC = 125°C)

−

11.5

14.5

−

3.0 ms

(TC = 125°C)

−

2.4

9.0

−

SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)

Turn−On Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,

IB2 = 1.0 Adc, VCC = 300 V)

(TC = 125°C)

ton

−

200

190

300

−

ns

Turn−Off Time

(TC = 125°C)

toff

−

1.2

1.5

2.5

−

ms

Turn−On Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

IB2 = 2.25 Adc, VCC = 300 V)

(TC = 125°C)

ton

−

100

250

180

−

ns

Turn−Off Time

(TC = 125°C)

toff

−

1.6

2.0

2.5

−

ms

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,

IB2 = 1.0 Adc)

(TC = 125°C)

tfi

−

100

120

180

−

ns

Storage Time

(TC = 125°C)

tsi

−

1.5

1.9

2.75

−

ms

Crossover Time

(TC = 125°C)

tc

−

250

230

350

−

ns

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

IB2 = 2.25 Adc)

(TC = 125°C)

tfi

−

85

135

150

−

ns

Storage Time

(TC = 125°C)

tsi

−

2.0

2.6

3.2

−

ms

Crossover Time

(TC = 125°C)

tc

−

210

250

300

−

ns

3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

4. Proper strike and creepage distance must be provided.

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