MJF2955G datasheet(2/5 Pages) ONSEMI

Part #	MJF2955G

Description	Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJF3055 (NPN), MJF2955 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS (Note 4)

Collector−Emitter Sustaining Voltage

(IC = 200 mAdc, IB = 0)

VCEO(sus)

90

−

Vdc

Collector Cutoff Current

(VCE = 90 Vdc, VBE = 0)

ICES

−

1.0

mAdc

Collector Cutoff Current

(VCE = 90 Vdc, IE = 0)

ICBO

−

1.0

mAdc

Emitter−Base Leakage

(VEB = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

(ICE = 4.0 Adc, VCE = 4.0 Vdc)

DC Current Gain

(ICE = 10 Adc, VCE = 4.0 Vdc)

hFE

20

5.0

100

−

Collector−Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

−

1.0

2.5

Vdc

Base−Emitter On Voltage

(IC = 4.0 Adc, VBE = 4.0 Vdc)

VBE(on)

−

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain−Bandwidth Product

(VCE = 10 Vdc, IC = 0.5 Adc, ftest = 500 kHz)

fT

2.0

−

MHz

4. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

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