MJF15031G datasheet(2/6 Pages) ONSEMI

Part #	MJF15031G

Description	Complementary Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJF15030 (NPN), MJF15031 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

150

−

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

ICEO

−

10

mAdc

Collector Cutoff Current

(VCB = 150 Vdc, IE = 0)

ICBO

−

10

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−

10

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)

(IC = 2 Adc, VCE = 2 Vdc)

(IC = 3 Adc, VCE = 2 Vdc)

(IC = 4 Adc, VCE = 2 Vdc)

hFE

40

20

−

Typ

DC Current Gain Linearity

(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)

hFE

2

3

Collector−Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.1 Adc)

VCE(sat)

−

0.5

Vdc

Base−Emitter On Voltage

(IC = 1 Adc, VCE = 2 Vdc)

VBE(on)

−

1

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

30

−

MHz

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. fT = ⎪hfe⎪• ftest.

t, TIME (ms)

1

0.01

0.3

0.2

0.1

0.05

0.02

0.5

10

30

50

100

300

500

1K

3K

5K

SINGLE PULSE

RqJC(t) = r(t) RqJC

TJ(pk) - TC = P(pk) RqJC(t)

15

3

10K

0.5

0.3

0.03

0.1

0.2

20

200

2K

2

Figure 1. Thermal Response

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